Infineon CoolGaN IGLD60R070D1 Structural Analysis Report
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| Package appearance | GaN FET die |
Report summary
Infineon collaborated with Panasonic in March 2015 to manufacture GaN(Gallium Nitride) power devices under license, and LTEC also analyzed the product released in 2017(IGT60R190D1S). The product we analyzed this time(IGLD60R070D1) was released in 2018. Report includes the planar, cross-section structure analysis and the changes from previous products.
Note: The structure and process analysis report of IGT60R190D1S is available.
Please contact LTEC for details.
Product specifications and feature
- Product number : IGLD60R070D1
- VDS=600V ID=31A RDS(on)=70mΩ
- Product release date ： April. 2018 (From the datasheet)
- Panasonic’s proprietary technology called GIT (Gate Injection Transistor) is used.
- Application : 48V power distribution, energy storage systems, uninterruptible power supplies (UPS)
Report contents and results summary (76 pages)
- 3Metal＋Ohmic Metal.
- P-GaN mesa Gate structure
- Comparison of ON-resistance (RONxAA) and structure with IGT60R190D1S.
Please contact us for report pricing.
