Si-IGBT(1200V)：StarPower Structure Analysis Report
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| Module appearance | Inside the Module | Si-IGBT die |
Report summary
The use of power modules in inverters for electric vehicles (BEVs) is on the rise. Among these, the number of power modules made in China is increasing, with StarPower and BYD leading the market, and their performance is improving year by year.
In this report, we analyzed the IGBT module of StarPower D600HTA120P6HT and summarized the features of the Si-IGBT structure and module structure.
Product specifications and feature
- Model number: GD600HTA120P6HT 1200V Si–IGBT *ICN =600A
- Product release: March 2023
- 6 in 1 Half-Bridge module for automotive applications
Report contents and results summary
(1) Module structure analysis report (35 pages)
- AMC board in insulation board of the power module is used.
- Ag-Cu solder is used as the die attach material between the chip and die pad.
- The cooling pin is oval in shape, with unevenness formed on the bottom of the pin.
(2) Si-IGBT structure analysis report (73 pages)
- The transistor cell has a striped trench gate structure.
- Two types of trench gates are used in the cell area.
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