GaN FET (150V)：Innoscience INN150LA070A Basic Analysis Report
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GaN FET die | |||
Overview
In recent years, the demand of 150V GaN FETs (major manufacturers: ROHM, EPC & GaN Systems) has been increasing for 48V applications such as data center equipment, communications equipment, and electric vehicles (Evs). Innoscience, a Chinese semiconductor manufacturer specializing in GaN FETs, announced its lineup of 150V GaN FETs in March 2022.
This report analyzes the 150V GaN FET announced by Innoscience, conducting structure analysis including package structure and die cross-section, and comparing it with the 150V GaN FET(GAN7R0-150LBE) manufactured by Nexperia.
Product features
- Product number : INN150LA070A Vdss = 150V, Id = 28A, Ron = 5.6mΩ
- Product release date: March 2022.
- GaN-on-Silicon E-mode (Normally-off) HEMT
- Applications: Motor drivers, Class D audio amplifiers, high frequency DC-DC converters for 48V systems, etc.
Report Contents (16 pages)
- The package appearance and datasheet value are similar to the Nexperia 150V GaN FET(GAN7R0-150LBE). There are also similarities in the die size, layout, and cross-sectional structure.
- Please see the report for further details.
Report price
Delivered one week after order placement
Please contact us for report pricing.
Note: The Nexperia 150V GaN FET GAN7R0-150LBE structure analysis report is now available for sale. Please contact LTEC for more information.
