SiC MOSFET(1200V)：Infineon IMB120R078M2H Overview Analysis Report

	Package	SiC MOSFET

Report summary

 In January 2024, Infineon announced a new 2nd generation (Gen 2) CoolSiC process technology, 1200V SiC MOSFET (M2H) product (web page). LTEC released the following  three analysis reports on this new Gen 2 transistors. (1) Product overvoew reort (2) Structure analysis report, and  (3) Process flow analysis report.

　The characteristics of the 1200V transistor used in Infineon CoolSiC have evolved in the approximately six years since Gen 1 in 2017 to Gen 2. This report gives insights on Infineon’s approach and strategy for the development of advanced SiC MOSFETs.

Product specifications/features

Reports Contents/Overview of Results (Table o Contents P.2, P.4 and P.6)

1. Overview analysis report (17 pages)

• Package and die observation, size measurements
• SiC MOSFET cross-sectional analysis: cell part dimensions, epi structure, thicknesses

2. Structure analysis Report (72 pages)

• Packaging/mounting technology: Ultra-thin die attach using .XT technology.
• Structural comparison with Gen 1+ CoolSiC (M1H) products: Shrunk transistor cell size.
• TEM observation of gate insulating film.
• Includes the contents of the above Overview analysis report

3. Process analysis Report (48 pages)

• Achieves specific on-resistance RONxAA=180mΩ・mm2, ~18% lower than other companies’　4th generation. RONxAA reduction compared to CoolSiC Gen 1+ M1H technology.
• The channel carrier mobility is 3 to 4 times higher than that of competitors’ SiC transistors.
• Low RON temperature dependence inferred to correlate with low SiC/SiO2 interface traps.
• N-epi (drift) impurity concentration profile extraction. Estimated to include redesign and　high concentration CSL (current spreading layer).

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