semiconductor

Si MOSFET (150V):iDEAL Semiconductor SuperQMOSFET IS15M7R1S1C-7SR Structure Analysis Report


Package	Si MOSFET die

Report Overview

iDEAL Semiconductor, a fabless semiconductor manufacturer based in Lehigh Valley,Pennsylvania, has begun mass production of a family of products called SuperQ Power MOSFETs.
This SuperQ Power MOSFET technology is derived from an SJ-MOS-like resurf structure, and uses proprietary trench isolation technology and doping concentrations to rival wide bandgap semiconductors in key performance areas such as RonAA and blocking voltage.
This time, LTEC released a structure analysis report that clarifies structure features of this product through plane and cross-section analysis.

Product Features

Product type : iS15M7R1S1C VDS=150V、ID=133A、RDS(ON)=5.4mΩ　
Released data: June 2025

Datasheet：https://idealsemi.com/wp-content/datasheets/iS15M7R1S1C-Datasheet.pdf

Applications: AI data centers, high voltage DC power conversion, etc.

Analysis result summary

Structure Analysis Report (75 pages)
The transistor cells of this product are Si SJ MOSFETs with a trench gate structure,with an ALD (Atomic Layer Deposition) layer formed on the sidewalls of the trench.
In terms of performance, when compared to the Infineon 150V SiMOSFET (OptiMOS 5) with a similar rating to this product, the RonxAA of this product is about 2/3 of that of OptiMOS 5.

(*) A separate SCM analysis is required to confirm the ALD layer.Please contact us for more details. We can also create manufacturing process sequence and electrical characteristic analysis reports for this product. If you are interested, please contact us.