semiconductor

SiC MOSFET(1400V)：Infineon IMYR140R006M2H Package Structure Analysis Report


Package TO-247PLUS-4		SiC MOSFET

Report Overview

In October 2025, Infineon announced the 1400V CoolSiC in a TO-247PLUS package [1]. This product features a large-area SiC chip that achieves an ultra-low on-resistance of approximately 6 mΩ and a high drain current of around 188 A, and is intended for use in high-power applications such as xEV chargers, battery energy storage systems (BESS), commercial vehicles, construction equipment, and agricultural machinery.
Following our report on the structure, electrical characteristics, and SCM analysis (25G-0584-1-4: IMZC140R038M2H) of the 1400V CoolSiC MOSFET, this new report analyzes its package/mounting structure and chip configuration/layout. It can be utilized as a benchmarking reference to understand Infineon’s latest SiC power device design philosophy and packaging technology.

[1] https://www.infineon.com/market-news/2025/INFGIP202510-010

Product Features

Part number: IMYR140R006M2H Vdss=1400V, RON=5.8mΩ, Id=188A (100℃) mΩ
Released data: Oct. 2025

Datasheet：IMYR140R006M2H

Analysis result summary

⑴ Package Structure Analysis Report (27 pages)
- This product features approximately 1.5 times the available die area compared to the TO-247-4(IMZC140R038M2H) in the same series, enabling the mounting of large, low on-resistance dies.
- An ultra-thin die attach utilizing .XT Technology is formed.

⑵ SiC MOSFET Die Configuration and Layout Analysis Report (24 pages)
- The Ron x AA value—obtained by multiplying the on-resistance (Ron) by the active area (AA) of the transistor—is equivalent to that of the company’s second-generation SiC MOSFETs.
- This report analyzes the impact of die size and defect density on manufacturing yield.