semiconductor

SiC MOSFET(1200V)：LGE LGE3M18120Q Overview Analysis Report


Package	SiC MOSFET die

Report Overview

China has expanded its presence to the point where, in 2024 SiC power semiconductor sales, three of the top ten companies are Chinese. Adoption is expected to continue growing across a wide range of fields, including electric vehicles (EVs), renewable energy, and more.
The number of Chinese companies entering the SiC power semiconductor market is also increasing, with estimates reaching around 100 firms. LTEC has evaluated the SiC technology levels of major manufacturers such as BYD, Basic, Sanan, and Inventchip. However, in order to understand the overall technological landscape in China, it is considered important to investigate companies beyond the major players as well.
LTEC has now released an overview analysis report examining the SiC MOSFET technology level of LGE (Luguang Electronic Technology) in China..

Product Features

Product type: LGE3M18120Q VDS=1200V、ID=105A、RDS(ON)=18mΩ
Released data: 2024 (Datasheet)

Datasheet：https://www.lcsc.com/datasheet/C28451336.pdf

Applications：

Motor drivers, solar/wind inverters, EV charging stations,
AC/DC and DC/DC converters, uninterruptible power supplies (UPS)

Analysis result summary

Overview Analysis Report (20 pages)

The cross‑sectional structures of the cell array, die edge, and epitaxial layer were confirmed.
A comparison of technology levels with major manufacturers—such as Basic and Wolfspeed—was also conducted, including metrics such as specific on‑resistance and cell pitch.

If you would like a detailed structure analysis report for this product , please contact us.