SiC MOSFET (1200V): StarPower Europe AG DM400S12TDRB Overview Analysis Report
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| Package | SiC MOSFET Die |
Report Overview
StarPower Semiconductor manufactures its own SiC dies and has established its own 150mm (6-inch) SiC die production line, enabling it to supply automotive-grade SiC MOSFET dies, and a significant increase in sales volume is expected in the future.
StarPower Europe AG, the European subsidiary of StarPower, has established a European R&D Center in Germany, where it conducts research and development on new power semiconductor technologies, packaging, and materials for the development of StarPower’s next-generation models.
LTEC released an overview analysis report on the 1200V SiC MOSFET Gen1 for automotive applications, which was released by the company in 2024.
Product Features
| Product type: DM400S12TDRB VDSS=1200V、ID=64A、RDS(ON)=40mΩ Released data: Nov. 2024 |
Datasheet:https://starpowereurope.com/uploads/product/16/DM400S12TDRB.pdf
- Application:Hybrid and electric vehicles, motor drive inverters
Analysis result summary
- Overview Analysis Report (13 pages)
- Plan-view and cross-sectional SEM images of the transistor region, and cross-sectional SEM image of the outer periphery of the die.
- The Ron x AA of this product—the product of the on-resistance Ron and the active area (AA)—is comparable to that of STMicroelectronics’ latest-generation 1200V devices, demonstrating the high technological standards of this product.
※Please contact us if you are interested in the detailed SiC MOSFET structural analysis report (including package cross-sectional views).
Report price
Delivered one week after order placement. Please contact us for report pricing.
Report Brochure
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(25G-0385-1)SiC MOSFET (1200V) StarPower Europe AG DM400S12TDRB Overview Analysis Report
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