GaN(650V): GaN Transistors Manufacturing Cost Analysis Report
Report Overview
GaN-based power devices are attracting significant attention in applications such as AC adapters, power supplies, BLDC motor drivers, and AI power supplies because they can operate at much higher frequencies than SiC MOSFETs. Furthermore, new GaN Bidirectional Switches (BDS) enable new circuit topologies, and are considered for applications in xEVs (OBCs, matrix converters, etc.).
For over 10 years, LTEC has accumulated data on high-voltage GaN transistor technologies. Now, leveraging these data, LTEC is releasing a report on the current technological trends and manufacturing costs of mainstream GaN-on-Si transistors exceeding 650V.
Investigated GaN Products
- The manufacturing cost analysis is based on the structural and process analysis of the following GaN products,
- INFINEON 650V GaN G5 (INFINEON Villach, Austria: 200mm→300mm)
- NAVITAS/Cambridge GaN Devices GaN IC (TSMC Foundry)
- INNOSCIENCE 650V GaN (China naufacturer)
Analysis details and report price
- Refer to the next page for details of the report’s contents
- Comparison of the Average Selling Price (ASP) trend and the cost/price and die area/Ron of power transistors. Is there a cost advantage at the system level?
- Trends in the specific On-Resistance (RonA) Performance Index: GaN vs. SiC
- On the area scaling limit of lateral (horizontal) GaN transistors
- Cost/price trend survey of GaN-on-Si (Sapphire) wafers
- Cost analysis of processed wafers based on manufacturing process flow extraction
- What is the impact (percentage) of GaN wafer costs?
- GaN device cost and price per die area?
- Cost estimate of Foundry manufactured GaN device wafer.
Report Brochure
(25G-0880-1)GaN(650V) GaN Transistors Manufacturing Cost Analysis Report
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