SiC power Module (1200V)：StarPower MD22HFS120N6HY Module, SiC MOSFET Analysis Reports

Module	SiC MOSFET Die

Report Overview

June 2024, Chinese company StarPower Semiconductor announced a SiC power module for 800V EV drive.This module features extremely low on-resistance using 1200V SiC MOSFETs, making it usable even in 800V onboard power supply environments.
Its molded, single-sided cooling structure, solid copper base plate with PINFIN structure, and AMB (Si3N4) substrate demonstrate the company‘s commitment to current trends and reliability.
This report clarifies the features of this product through an analysis of the module’s structure, an overview of the SiC MOSFETs mounted, and a structural analysis.

Product Features

• Product type: MD22HFS120N6HY VDSS=1200V、ID=648A、RDS(ON)=2.12mΩ Released data: June 2024

  Datasheet：https://www.powersemi.com/Upload/Products/202407//pdf/MD22HFS120N6HY.pdf

  • Half-bridge module 2 in 1-package
  • Applications: Hybrid and electric vehicles, motor drive inverters

Analysis result summary

• ① Module Structure Analysis Report (44 pages)
  • Cu pad is formed on the source bonding area of ​​SiC MOSFET.
  • Ag sinter is used to connect SiC MOSFET to AMB substrate and aforementioned pad.

• ② SiC MOSFET Overview Analysis Report (15 pages)
  • The Ron x AA of this product is comparable to STMicroelectronics’ 3rd-generation SiC MOSFETs.

• ③ SiC MOSFET Structure Analysis Report (53 pages)
  • The gate oxide film is thinner than that of a typical planar SiC MOSFET.

Report price

Delivered one week after order placement. Please contact us for report pricing.

Report Brochure

(25G-0386-1~3)SiC power Module (1200V)：StarPower MD22HFS120N6HY Module, SiC MOSFET Analysis Reports

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