semiconductor
GaN FET(650V)：Infineon IGLR65R140D2 Package and GaN FET Structure Analysis Report
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| Package | GaN FET die |
Report Overview
Infineon released a new generation of high-voltage discrete GaN transistors, “CoolGaN Transistor 650V G5.”
CoolGaN Transistor 650V G5 offers superior switching performance and low on-resistance compared with major competitors’ products and Infineon’s previous generations.
LTEC have conducted a structure analysis of this product and released the following report, which clarifies the features of its planar layout and cross-sectional structure.
Product Features
| Product type: IGLR65R140D2 VDS=650V ID=23A RDS(on) = 140mΩ Released data: Apr. 2025 |
Manufactured in own fab compatible with 200mm (8 inch) wafers
Analysis result summary
- Package Structure Analysis Report (23 pages)
Analysis of materials such as bonding wires and die attach, and measurement of film thickness of each layer. - GaN FET Structure Analysis Report (79 pages)
Planar structure analysis confirmed that the layout efficiency (AA (transistor area))/A (die area)) has improved to 65% (42% for the IGT60R190D1S).
In terms of cross-sectional structure, changes have been confirmed, including a change in the global wiring material from the previous product.
TEM Cross section analysis was used to conduct detailed observations of the GaN epi layer and gate structure, and a comparison was made with the previous product.
Report price
Delivered one week after order placement. Please contact us for report pricing.
Report Brochure
25G-0110-1,2 GaN FET(650V)Infineon IGLR65R140D2XUMA1 Packageand GaN FET Structure Analysis Report
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