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SiC MOSFET (1200V): Diodes Incorporated (Nasdaq: DIOD) DMWS120H100SM4 Structure Analysis Report

Package SiC MOSFET die Transistor cell  cross section Report summary The number of products ad……

semiconductor

GaN HEMT(650V): Cambridge GaN Devices CGD65B200S2 Circuit Analysis Report

Report summary  British start-up Cambridge GaN Devices (CGD) has announced a new 650V GaN HEMT with gate input circui……

semiconductor

SiC MOSFET(1200V)：BASiC B2M065120Z Structure, Process and Short-Circuit Evaluation Analysis Reports

    Package SiC MOSFET Report summary In May 2023, BASiC Semiconductor, a major SiC device manu……

semiconductor

Toshiba DC brushless motor drive IC TPD4164F structural analysis report

Package Die image Report summary 　In March 2023, Toshiba announced the start of mass production o……

semiconductor

SiC MOSFET（2000V）：Infineon IMYH200R100M1HXKSA1 Process analysis report

Package SiC MOSFET Report summary 　In January 2023, Infineon released a 2000V SiC MOSFET. The pro……

semiconductor

SiC MOSFET(1200V)：Infineon AIMBG120R010M1 Structure Analysis Report

Package SiC MOSFET Report summary In May 2023, Infineon announced a new generation 1200V CoolSiC ……

semiconductor

Isolated GaN FET Gate Driver: Allegro MicroSystems AHV85110 Structural analysis Report

Package X-ray Die image (Primary) Die image (Secondary) Report summary  In June 2023, Alleg……

semiconductor

SiC MOSFET(1200V)：Nexperia NSF080120L3A0 Structure Analysis Report

Package SiC MOSFET Report summary In November 2023, Mitsubishi Electric and Nexperia announced jo……

semiconductor

GaN HEMT(150V)： Rohm EcoGaN GNE1040TB Structure Analysis Report

 　 Package appearance GaN die Report summary In 2022, ROHM announced its entry into the GaN device……

semiconductor

SiC MOSFET (1200V):INFINEON AIMZH120R060M1T Short-Circuit (SC) Robustness Analysis Report

Package SiC SCWT result Product： AIMZH120R060M1T  　Vds=1200V  Id=38A Product release date: Nov……

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